HPLR3103 |
RFQ for HPLR3103 Required Field |
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| Product | Manufacturers | Pack | D/C |
| HPLR3103 | - | - | - |
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features |
| • Logic Level Gate Drive• 52A†, 30V• Low On-Resistance, rDS(ON) = 0.019W• UIS Rating Curve• Related Literature- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards" |
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HPLR3103 |
HPLU3103 |
UNITS | ||
| Drain to Source Voltage (Note 1) |
VDSS |
30 |
V | |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) |
VDGR |
30 |
V | |
| Gate to Source Voltage |
VGS |
±16V |
V | |
| Continuous Drain Current |
ID |
52 |
A | |
| Pulsed Drain Current (Note 2) |
IDM |
390 |
A | |
| Single Pulse Avalanche Energy (Note 4) |
EAS |
240 |
mj | |
| Power Dissipation |
PD |
89 |
W | |
| Derate Above 25 |
0.71 |
W/ | ||
| Operating and Storage Temperature |
TJ, TSTG |
-55 to 150 |
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